Typical Performance Curves
1.0
Figure 1. Normalized Intensity vs. Wavelength
910
Figure 2. Peak Wavelength vs. Ambient Temperature
0.9
908
I F = 20mA DC
0.8
906
0.7
0.6
0.5
0.4
904
902
900
0.3
898
0.2
0.1
896
0.0
700
750
800
850
900
950
1,000
1,050
894
0
10
20
30
40
50
60
70
80
90
100
λ (nm)
Figure 3. Normalized Radiant Intensity vs. Forward Current
T A – AMBIENT TEMPERTURE ( ° C)
Figure 4. Normalized Radient Intensity vs. Ambient Temperature
10
Normalized to:
I F = 100mA Pulsed
t PW = 20mS
Duty Cycle = 4%
T A = 25 ° C
1.3
1.2
1.1
Normalized to:
I F = 20mA Pulsed
t PW = 20mS
Duty Cycle = 4%
T A = 25 ° C
1.0
1
0.9
0.8
0.7
0.1
10
100
1000
0.6
-15
0
15
30
45
60
75
90
105
5.0
I F – FORWARD CURRENT (mA)
Figure 5. Forward Voltage vs. Forward Current
2.1
T A – AMBIENT TEMPERTURE ( ° C)
Figure 6. Forward Voltage vs. Ambient Temperature
4.0
I F Pulsed
t PW = 20mS
Duty Cycle = 4%
T A = 25 ° C
2.0
I F = 20mA Pulsed
t PW = 20mS
Duty Cycle = 4%
1.9
3.0
1.8
2.0
1.7
1.0
1.6
0.0
10
100
1000
1.5
-15
0
15
30
45
60
75
90
105
I F – FORWARD CURRENT (mA)
?2004 Fairchild Semiconductor Corporation
QEE122, QEE123 Rev. 1.0.0
3
T A – AMBIENT TEMPERTURE ( ° C)
www.fairchildsemi.com
相关PDF资料
QEE273 LED EMITTER IR SIDELOOKER
QFM-TRX1-24G TRANSCEIVER MOD RF 2.4GHZ 3.6V
QHX220IQSR IC RF NOISE CANCELLING 16QFN
QRD1113 SENSR OPTO TRANS 1.27MM REFL PCB
QRE1113GR SENSOR OPTO TRANS REFL SMD PHOTO
QRM85BXXG02E LED PMI REAR MOUNT GREEN
QS5K2TR MOSFET 2N-CH 30V 2A TSMT5
QS5U12TR MOSFET N-CH 30V 2A TSMT5
相关代理商/技术参数
QEE123K 制造商:Rochester Electronics LLC 功能描述:- Bulk
QEE123K.E3R0 制造商:Rochester Electronics LLC 功能描述:- Bulk
QEE123K_E3R0 功能描述:光电晶体管 0.4mW 1.7V IR LED RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
QEE213 功能描述:红外发射源 GaaS Type a LED Sidelooker RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
QEE213_05 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Plastic Infrared Light Emitting Diode
QEE213_Q 功能描述:红外发射源 GaaS Type a LED Sidelooker RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
QEE273 功能描述:红外发射源 LED-IR SIDELOOKER USED IN QVE00130 RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
QEE323 功能描述:红外发射源 LED FOR QRD SWT RECT PKG RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk